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QM75TF-HB

Mitsubishi Electric Semiconductor

Transistor

MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75TF-HB • • • • • IC Collector cur...


Mitsubishi Electric Semiconductor

QM75TF-HB

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Description
MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75TF-HB IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102±0.3 6 14 6 14 6 17 7–M4 BuP BuP EuP BvP EvP BwP EwP 4–φ5.5 P BvP EvP BvN EvN U V BwP EwP BwN EwN 74±0.25 91±0.3 P BuN EuN BvN EvN BwNEwN 30 16.5 P P EuP BuN EuN 30 U N V W 43 N 12 N N W 24.5 22 20 20 22 2 6.5 17 80±0.25 11 27 Tab#110, t=0.5 8.1 30+1.5 – 0.2 29.5 LABEL 7 Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 6...




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