Document
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab
PBYR1545CTF, PBYR1545CTX series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 15 A VF ≤ 0.57V
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1545CTF series is supplied in the SOT186 package. The PBYR1545CTX series is supplied in the SOT186A package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR15 PBYR15 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths ≤ 89 ˚C square wave; δ = 0.5; Ths ≤ 93 ˚C square wave; δ = 0.5; Ths ≤ 93 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTF 40CTX 40 40 40 15 15 100 110 1 150 175 45CTF 45CTX 45 45 45 UNIT
V V V A A A A A ˚C ˚C
IRRM Tj Tstg
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR1545CTF, PBYR1545CTX series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS SOT186 package; R.H. ≤ 65%; clean and dustfree MIN. TYP. MAX. UNIT 1500 V
Visol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree Capacitance from pin 2 to external heatsink f = 1 MHz
-
-
2500
V
Cisol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes (with heatsink compound) in free air MIN. TYP. MAX. UNIT 55 6 5.2 K/W K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.44 0.63 0.62 0.22 18 270 0.57 0.72 0.84 1 25 V V V mA mA pF
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier.