DatasheetsPDF.com

PBYR1545CTF Dataheets PDF



Part Number PBYR1545CTF
Manufacturers NXP
Logo NXP
Description Rectifier diodes Schottky barrier
Datasheet PBYR1545CTF DatasheetPBYR1545CTF Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 15 A VF ≤ 0.57V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output recti.

  PBYR1545CTF   PBYR1545CTF



Document
Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 15 A VF ≤ 0.57V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1545CTF series is supplied in the SOT186 package. The PBYR1545CTX series is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR15 PBYR15 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths ≤ 89 ˚C square wave; δ = 0.5; Ths ≤ 93 ˚C square wave; δ = 0.5; Ths ≤ 93 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTF 40CTX 40 40 40 15 15 100 110 1 150 175 45CTF 45CTX 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg October 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1545CTF, PBYR1545CTX series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS SOT186 package; R.H. ≤ 65%; clean and dustfree MIN. TYP. MAX. UNIT 1500 V Visol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree Capacitance from pin 2 to external heatsink f = 1 MHz - - 2500 V Cisol - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes (with heatsink compound) in free air MIN. TYP. MAX. UNIT 55 6 5.2 K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.44 0.63 0.62 0.22 18 270 0.57 0.72 0.84 1 25 V V V mA mA pF October 1998 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier.


PBYR1545CTB PBYR1545CTF PBYR1545CTX


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)