PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
PACKAGE DIMENSIONS
0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM
PIN 1 PI...
PHOTO
TRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
PACKAGE DIMENSIONS
0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM
PIN 1 PIN 2
QRB1114
E S
E
0.373 (9.47)
0.226 (5.74)
0.703 (17.86)
S
PIN 3 PIN 4
0.020 (0.51) 4X
0.150 (3.81) MIN 0.603 (15.32)
REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR
0.210 (5.33)
SCHEMATIC
0.300 (7.62)
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1
2
4
3
DESCRIPTION
The QRB1113/1114 consists of an infrared emitting diode and an
NPN silicon photo
transistor mounted side by side on a converging optical axis in a black plastic housing. The photo
transistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.
FEATURES
No contact surface sensing Photo
transistor output Focused for sensing specular reflection Daylight filter on photosensor Dust cover
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
3/5/02 DS300350
PHOTO
TRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTER Reverse Voltage Power SENSOR Dissipation(1) (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD Rating -40 to +85 -40 to +85 240 for 5...