QRB1114

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 PACKAGE DIMENSIONS 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 QRB1114 E S E 0.373 (9.47) 0.226 (5.74) 0.703 (17.86) S PIN 3 PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR 0.210 (5.33) SCHEMATIC 0.300 (7.62) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 2 4 3 DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter. FEATURES No contact surface sensing Phototransistor output Focused for sensing specular reflection Daylight filter on photosensor Dust cover © 2002 Fairchild Semiconductor Corporation Page 1 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTER Reverse Voltage Power SENSOR Dissipation(1) (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD Rating -40 to +85 -40 to +85 240 for 5...