QS5U17

QS5U17 Transistors Small switching (30V, 2.0A) QS5U17 zFeatures 1) The QS5U17 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Nch MOSFET have a low on-state resistance with a fast switching. 3) Nch MOSFET is reacted a low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode have a low forward voltage. zExternal dimensions (Unit : mm) 1.0MAX 0.85±0.1 0.7±0.1 (4) (5) 2.8±0.2 1.6± 0.2 0.1 0 to 0.1 (1) (2) (3) 0.1 0.4 + −0.05 0.1 0.16 + −0.06 Each lead has same dimensions zApplications Load switch, DC / DC conversion Abbreviated symbol : U17 zStructure Silicon N-channel MOSFET Schottky Barrier DIODE zEquivalent circuit (5) (4) zPackaging specifications Package Type QS5U17 Code Basic ordering unit (pieces) Taping TR 3000 (1) ∗1 (2) ∗2 (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Anode (4) Cathode (5) Drain Rev.A 0.3 to 0.6 2.9±0.1 1.9±0.2 0.95 0.95 1/4 QS5U17 Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Total power dissipation Range of Storage temperature Symbol VDSS VGSS ID IDP IS ISP Tch VRM VR IF IFSM Tj PD Tstg Limits 30 12 ±2.0 ±8.0 0.8 3.2 150 25 20 1.0 3.0 125 1.0 −40 to 125 Unit V V A...