QSB320
SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1)...
QSB320
SURFACE MOUNT SILICON INFRARED PHOTO
TRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7)
0.134 (3.4) 0.118 (3.0)
0.094 (2.4)
FEATURES
0.043 (1.1) 0.020 (0.5) COLLECTOR 0.024 (0.6) 0.016 (0.4)
SCHEMATIC
COLLECTOR
Surface Mount PLCC-2 Package Wide Reception Angle, 120°
0.007 (.18) 0.005 (.12)
High Sensitivity Photo
transistor Output Matched Emitter: QEB421
EMITTER
NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified.
NOTES ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Collector Current Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-F VCE VEC IC PD Rating -55 to +100 -55 to +100 260 for 10 sec 35 5 15 165 Unit °C °C °C V V mA mW 1. Derate power dissipation linearly 2.2 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. D = 940 nm.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25°C)
SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength Wavelength Sensitivity Range Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current Saturation Voltage Rise Time Fall Time VCE...