QSB363

SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) 0.019 (0.5) 0.012 (0.3) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) 0.055 (1.4) SCHEMATIC COLLECTOR 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. FEATURES NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24° Black Plastic Package Matched Emitters: QEB363 or QEB373 Daylight Filter Tape & Reel Option (See Tape & Reel Specifications) Lead Form Options: Gullwing, Yoke, Z-Bend  2001 Fairchild Semiconductor Corporation DS300357 8/2/01 1 OF 5 www.fairchildsemi.com SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW NOTES 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recomm...