QSC113

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 PACKAGE DIMENSIONS 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) QSC113 QSC114 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM SCHEMATIC COLLECTOR 0.155 (3.94) 0.018 (0.46) SQ. (2X) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. FEATURES Tight production distribution. Steel lead frames for improved reliability in solder mounting. Good optical-to-mechanical alignment. Plastic package is infrared transparent black to attenuate visible light. Mechanically and spectrally matched to the QECXXX LED. Black plastic body allows easy recognition from LED.  2001 Fairchild Semiconductor Corporation DS300358 7/09/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW QSC113 QSC114 1. Derate power dissipation linearly 1.33 mW/°C a...