QSD123

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 PACKAGE DIMENSIONS 0.195 (4.95) QSD123 QSD124 REFERENCE SURFACE 0.305 (7.75) 0.800 (20.3) MIN EMITTER 0.040 (1.02) NOM COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES: 0.020 (0.51) SQ. (2X) 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. FEATURES NPN Silicon Phototransistor Package Type: T-1 3/4 Notched Emitter: QED12X/QED22X/QED23X Narrow Reception Angle: 24°C Daylight Filter Package Material and Color: Black Epoxy High Sensitivity  2001 Fairchild Semiconductor Corporation DS300361 7/20/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW QSD123 QSD124 NOTE: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Solderin...