QSE114

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) Ø 0.065 (1.65) QSE114 0.050 (1.27) 0.200 (5.08) Ø 0.095 (2.41) 0.500 (12.70) MIN EMITTER COLLECTOR 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES NPN silicon phototransistor Package type: Sidelooker Medium wide reception angle, 50° Package material and color: black epoxy Matched emitter: QEE113 Daylight filter High sensitivity © 2002 Fairchild Semiconductor Corporation Page 1 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW QSE114 Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm...