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PBYR2045CTB Dataheets PDF



Part Number PBYR2045CTB
Manufacturers NXP
Logo NXP
Description Rectifier diodes Schottky barrier
Datasheet PBYR2045CTB DatasheetPBYR2045CTB Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR2045CT, PBYR2045CTB series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V a1 1 k 2 a2 3 IO(AV) = 20 A VF ≤ 0.57 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for.

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR2045CT, PBYR2045CTB series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V a1 1 k 2 a2 3 IO(AV) = 20 A VF ≤ 0.57 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2045CT series is supplied in the SOT78 conventional leaded package. The PBYR2045CTB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR20 PBYR20 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 106 ˚C square wave; δ = 0.5; Tmb ≤ 128 ˚C square wave; δ = 0.5; Tmb ≤ 128 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CT 40CTB 40 40 40 20 20 135 150 1 150 175 45CT 45CTB 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1. It is not possible to make connection to pin 2 of the SOT404 pckage. October 1998 1 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYR2045CT, PBYR2045CTB series MIN. - TYP. MAX. UNIT 60 50 2 1.5 K/W K/W K/W K/W per diode both diodes SOT78 package in free air SOT404 package, pcb mounted, minimum footprint, FR4 board ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage per diode Reverse current per diode Junction capacitance per diode CONDITIONS IF = 10 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.45 0.64 0.64 0.3 22 380 0.57 0.72 0.84 1.3 35 V V V mA mA pF October 1998 2 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR2045CT, PBYR2045CTB series 10 8 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.015 Ohms PBYR1045 Tmb(max) (C) D = 1.0 130 100 Reverse current, IR (mA) 125 C PBYR2045CT 134 0.5 10 100 C 6 0.1 4 0.2 138 1 75 C 50 C 0.1 Tj = 25 C 142 I tp D= tp T 2 T t 146 150 15 0 0.01 0 25 Reverse voltage, VR (V) 50 0 5 10 Average forward current, IF(AV) (A) Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 8 7 6 5 4 3 2 1 0 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.015 Ohms PBYR1045 Tmb(max) (C) a = 1.57 134 136 138 140 142 144 146 148 Cd / pF 1000 PBYR2045CT 2.2 2.8 4 1.9 100 0 2 4 6 8 Average forward current, IF(AV) (A) 150 10 10 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). PBYR2045CT Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 50 Forward current, IF (A) Tj = 25 C Tj = 125 C 10 Transient thermal impedance, Zth j-mb (K/W) 40 1 30 typ 20 max 10 T 0.1 P D tp D= tp T t 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1645 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). October 1998 3 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g PBYR2045CT, PBYR2045CTB series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 4 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max PBYR2045CT, PBYR2045CTB series 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.8. SOT404 : centre pin connect.


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