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PBYR2100CT Dataheets PDF



Part Number PBYR2100CT
Manufacturers NXP
Logo NXP
Description Schottky barrier double diode
Datasheet PBYR2100CT DatasheetPBYR2100CT Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2100CT Schottky barrier double diode Product specification Supersedes data of 1996 Oct 14 1999 May 25 Philips Semiconductors Product specification Schottky barrier double diode FEATURES • Low switching losses • High breakdown voltage • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Schottky barrier double diode fabrica.

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DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2100CT Schottky barrier double diode Product specification Supersedes data of 1996 Oct 14 1999 May 25 Philips Semiconductors Product specification Schottky barrier double diode FEATURES • Low switching losses • High breakdown voltage • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Schottky barrier double diode fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package. 1 Top view Marking code: BYR210. 1 PBYR2100CT PINNING PIN 1 2 3 4 anode (a1) common cathode anode (a2) common cathode DESCRIPTION 4 4 3 2 2 3 MAM086 Fig.1 Simplified outline (SOT223), pin configuration and symbol. 1999 May 25 2 Philips Semiconductors Product specification Schottky barrier double diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR VRRM VRWM IF(AV) continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 85 °C; see Fig.2; Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method tp = 100 µs − − − − PARAMETER CONDITIONS MIN. PBYR2100CT MAX. UNIT 100 100 100 1 V V V A IFSM IRSM Tstg Tj Tamb Notes non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature operating ambient temperature − − −65 −65 − 10 0.5 +150 +150 85 A A °C °C °C 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 70 UNIT K/W forward voltage reverse current diode capacitance IF = 1 A; note 1; see Fig.3 IF = 1 A; Tj = 100 °C; note 1; see Fig.3 VR = VRRMmax; note 1; see Fig.4 VR = VRRMmax; Tj = 100 °C; note 1; see Fig.4 VR = 4 V; f = 1 MHz; see Fig.5 790 690 0.5 5 100 mV mV mA mA pF PARAMETER CONDITIONS MAX. UNIT 1999 May 25 3 Philips Semiconductors Product specification Schottky barrier double diode GRAPHICAL DATA PBYR2100CT 1.2 I F(AV) (A) 0.8 MSA897 10 IF (A) 1 MSA895 10 1 0.4 10 2 (1) (2) (3) (4) (5) 0 0 40 80 120 Tj ( oC) 160 10 3 0 0.4 0.8 1.2 V (V) 1.6 F (1) Tamb = 25 °C. (3) Tamb = 100 °C. (2) Tamb = 85 °C. (4) Tamb = 125 °C. (5) Tamb = 150 °C. Fig.3 Fig.2 Average forward current derating curve. Forward current as a function of forward voltage; typical values. 10 1 IR (A) 10 2 (5) (4) (3) (2) MSA898 10 3 MSA896 Cd (pF) 10 3 10 2 10 4 10 5 (1) 10 6 10 0 20 40 60 80 100 VR (V) 0 50 VR (V) 100 (1) Tamb = 25 °C. (3) Tamb = 100 °C. (2) Tamb = 85 °C. (4) Tamb = 125 °C. (5) Tamb = 150 °C. f = 1 MHz. Fig.4 Reverse current as a function of reverse voltage; typical values. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1999 May 25 4 Philips Semiconductors Product specification Schottky barrier double diode PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads PBYR2100CT SOT223 D B E A X c y HE b1 v M A 4 Q A A1 1 e1 e 2 bp 3 w M B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 1999 May 25 5 Philips Semiconductors Product specification Schottky barrier double diode DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PBYR2100CT This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIF.


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