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PBYR2150CT Dataheets PDF



Part Number PBYR2150CT
Manufacturers NXP
Logo NXP
Description Schottky barrier double diode
Datasheet PBYR2150CT DatasheetPBYR2150CT Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2150CT Schottky barrier double diode Preliminary specification 1996 Oct 14 Philips Semiconductors Preliminary specification Schottky barrier double diode FEATURES • Low switching losses • Low forward voltage • High breakdown voltage • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectification • Polarity protection. 1 2 3 1 PBYR2150CT DESCRIPTION The PBYR2150CT is.

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DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2150CT Schottky barrier double diode Preliminary specification 1996 Oct 14 Philips Semiconductors Preliminary specification Schottky barrier double diode FEATURES • Low switching losses • Low forward voltage • High breakdown voltage • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectification • Polarity protection. 1 2 3 1 PBYR2150CT DESCRIPTION The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package. 4 4 3 2 PINNING PIN 1 2 3 4 DESCRIPTION anode (a1) common cathode anode (a2) common cathode Top view MAM086 Marking code: BYR215. Fig.1 Simplified outline (SOT223), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR VRRM VRWM IF(AV) IFSM continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 85 °C; Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 − − − − − 150 150 150 1 10 V V V A A PARAMETER CONDITIONS MIN. MAX. UNIT non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method 1996 Oct 14 2 Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT SYMBOL Per diode Tstg Tj Tamb Notes PARAMETER CONDITIONS MIN. MAX. UNIT °C °C °C storage temperature junction temperature operating ambient temperature −65 −65 − +150 +150 80 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.2 IF = 0.1 A; note 1 IF = 0.5 A; note 1 IF = 1 A; note 1 IF = 1 A; Tj = 100 °C; note 1 IR reverse current VR = VRRMmax; note 1; see Fig.3 VR = VRRMmax; Tj = 100 °C; note 1; see Fig.3 Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 70 UNIT K/W diode capacitance VR = 4 V; f = 1 MHz; see Fig.4 400 650 850 690 1 10 100 mV mV mV mV mA mA pF PARAMETER CONDITIONS MAX. UNIT 1996 Oct 14 3 Philips Semiconductors Preliminary specification Schottky barrier double diode GRAPHICAL DATA MGD766 PBYR2150CT handbook, I halfpage 10 1 F (A) 10−2 handbook, halfpage IR (A) 10−3 (4) (3) MGD767 10−1 10−2 10−3 10−4 10−5 10−6 (4) (3) (2) (1) 10−4 (2) 10−5 (1) 10−6 0 0.2 0.4 0.6 VF (V) 0.8 (1) (2) (3) (4) 0 50 100 VR (V) 150 (1) (2) (3) (4) Tamb = 25 °C. Tamb = 60 °C. Tamb = 80 °C. Tamb = 100 °C. Tamb = 25 °C. Tamb .


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