Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, ...
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.
PBYR3045PTF series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) PARAMETER PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) MAX. MAX. MAX. 45PTF 45 0.65 20 UNIT V V A 35PTF 40PTF 35 40 0.65 20 0.65 20
PINNING - SOT199
PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1 1 k2
1 2 3
a2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 20 20 30 135 150 -45 45 45 45 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 113 ˚C Output current (both diodes conducting) RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. square wave; δ = 0.5; Ths ≤ 109 ˚C
I2t IRRM IRSM Tstg Tj
t = 25 µs; δ = 0.5; Ths ≤ 109 ˚C t...