Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast...
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance
PBYR3045WT series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V
a1 1 k 2
a2 3
IO(AV) = 30 A IFSM = 300 A VF ≤ 0.6 V SOT429 (TO247)
GENERAL DESCRIPTION
Dual, common cathode
schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR3045WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR30 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 107 ˚C square wave; δ = 0.5; Tmb ≤ 124 ˚C square wave; δ = 0.5; Tmb ≤ 124 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40WT 40 40 40 30 30 300 330 2 150 175 45WT 45 45 45 V V V A A ...