Document
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
PBYR4025WT series
SYMBOL
QUICK REFERENCE DATA VR = 20 V / 25 V IO(AV) = 40 A VF ≤ 0.46 V SOT429 (TO247)
DESCRIPTION
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR4025WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab anode 1 (a) cathode (k) anode 2 (a) cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER CONDITIONS MIN. -20 20 20 20 40 40 180 200 MAX. -25 25 25 25 UNIT V V V A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 109 ˚C Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Tmb ≤ 128 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 128 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Storage temperature Operating junction temperature
IRRM Tstg Tj
-65 -
2 175 150
A ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. 45 MAX. 1.5 1.0 UNIT K/W K/W K/W
November 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 20 A; Tj = 125˚C IF = 40 A; Tj = 125˚C IF = 40 A VR = VRRM VR = VRRM; Tj = 100 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C
PBYR4025WT series
MIN. -
TYP. 0.40 0.50 0.60 2.0 30 900
MAX. 0.46 0.54 0.64 10 80 -
UNIT V V V mA mA pF
15
PF / W Vo = 0.38 V Rs = 0.004 Ohms
PBYR4025WT
Tmb(max) / C 127.5 D = 1.0
1A 100mA
IR / A 150 C
PBYR1625
0.5 10 0.2 0.1 5
I tp D= tp T t
1mA
125 C
135
10mA 100 C 75 C 50 C
142.5
100uA Tj = 25 C 10uA
T
0
0
5
10
15 IF(AV) / A
20
25
150 30
1uA 0 5 10 VR / V 15 20 25
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D.
PBYR1625
Fig.3. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
50
IF / A Tj = 25 C Tj = 125 C
10000
Cd / pF
PBYR1625
40 typ 30 max
1000
20
10
0
0
0.2
0.4 VF / V
0.6
0.8
1
100
1
10 VR / V
100
Fig.2. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.4. Typical junction capacitance per diode; Cd = f(VR); f.