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PBYR4025WT Dataheets PDF



Part Number PBYR4025WT
Manufacturers NXP
Logo NXP
Description Rectifier diodes schottky barrier
Datasheet PBYR4025WT DatasheetPBYR4025WT Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR4025WT series SYMBOL QUICK REFERENCE DATA VR = 20 V / 25 V IO(AV) = 40 A VF ≤ 0.46 V SOT429 (TO247) DESCRIPTION a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, hi.

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Philips Semiconductors Product specification Rectifier diodes schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR4025WT series SYMBOL QUICK REFERENCE DATA VR = 20 V / 25 V IO(AV) = 40 A VF ≤ 0.46 V SOT429 (TO247) DESCRIPTION a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR4025WT series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab anode 1 (a) cathode (k) anode 2 (a) cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER CONDITIONS MIN. -20 20 20 20 40 40 180 200 MAX. -25 25 25 25 UNIT V V V A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 109 ˚C Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Tmb ≤ 128 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 128 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Storage temperature Operating junction temperature IRRM Tstg Tj -65 - 2 175 150 A ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. 45 MAX. 1.5 1.0 UNIT K/W K/W K/W November 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 20 A; Tj = 125˚C IF = 40 A; Tj = 125˚C IF = 40 A VR = VRRM VR = VRRM; Tj = 100 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C PBYR4025WT series MIN. - TYP. 0.40 0.50 0.60 2.0 30 900 MAX. 0.46 0.54 0.64 10 80 - UNIT V V V mA mA pF 15 PF / W Vo = 0.38 V Rs = 0.004 Ohms PBYR4025WT Tmb(max) / C 127.5 D = 1.0 1A 100mA IR / A 150 C PBYR1625 0.5 10 0.2 0.1 5 I tp D= tp T t 1mA 125 C 135 10mA 100 C 75 C 50 C 142.5 100uA Tj = 25 C 10uA T 0 0 5 10 15 IF(AV) / A 20 25 150 30 1uA 0 5 10 VR / V 15 20 25 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. PBYR1625 Fig.3. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 50 IF / A Tj = 25 C Tj = 125 C 10000 Cd / pF PBYR1625 40 typ 30 max 1000 20 10 0 0 0.2 0.4 VF / V 0.6 0.8 1 100 1 10 VR / V 100 Fig.2. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.4. Typical junction capacitance per diode; Cd = f(VR); f.


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