Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast...
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance
PBYR645CTD series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 6 A VF ≤ 0.6 V SOT428
DESCRIPTION
tab
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual
schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CTD series is supplied in the SOT428 surface mounting package.
PINNING
PIN 1 2 3 tab anode 1 cathode1 anode 2
2
cathode
1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR6 Tmb ≤ 113 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTD 40 40 40 6 6 65 70 1 150 175 45CTD 45 45 45 UNIT V V V A A A A A ˚C ˚C
IRRM Tj Tstg
1 it is not possible to make connection to pin 2 of ...