Document
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
GENERAL DESCRIPTION
Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.
PBYR745X series
QUICK REFERENCE DATA
SYMBOL VRRM VF IF(AV) PARAMETER PBYR7Repetitive peak reverse voltage Forward voltage Average forward current MAX. 35X 35 0.57 7.5 MAX. 40X 40 0.57 7.5 MAX. 45X 45 0.57 7.5 UNIT V V A
PINNING - SOD113
PIN 1 2 DESCRIPTION cathode anode
PIN CONFIGURATION
case
SYMBOL
k 1
a 2
case isolated
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IF(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 7.5 10.6 15 100 110 -45 45 45 45 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 128 ˚C Average forward current square wave; δ = 0.5; Ths ≤ 123 ˚C
I2t IRRM IRSM Tstg Tj
RMS output current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 123 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature
-65 -
50 1 1 175 150
A2s A A ˚C ˚C
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. -
PBYR745X series
TYP.
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air. MIN. TYP. 55 MAX. 5.5 UNIT K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRRM VR = VRRM; Tj = 125 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C MIN. TYP. 0.50 0.62 0.78 50 13 350 MAX. 0.59 0.72 0.84 100 22 UNIT V V V µA mA pF
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
PBYR745X series
8 7 6 5 4
PF / W
Vo = 0.419 Rs = 0.015
PBYR745F
Ths(max) / C
106 111.5
IR / mA 100
PBYR745
D = 1.0 0.5 0.2 0.1 3 2 1
T I tp D= tp T t
117 122.5 128 133.5 139 144.5
10
150 C 125 C
1 100 C 0.1
75 C Tj = 50 C 0 25 VR/ V 50
0.01
10 150 12
0
0
2
4
6 IF(AV) / A
8
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D.
PF / W
Vo = 0.419 Rs = 0.015
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
5
PBYR745
Ths(max) / C a = 1.57 1.9
122.5
Cd / pF 1000
PBYR745
4 2.8 3 4
2.2
128
133.5
100
2 139
1
144.5
0
0
1
2
3
4 IF(AV) / A
5
6
7
150 8
10 1 10 VR / V 100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
IF / A Tj = 25 C 40 Tj = 125 C PBYR745 typ max
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
50
Zth j-hs (K/W) 10
1
30
20
0.1
10
P D
tp
t
0
0.01
0 0.2 0.4 0.6 0.8 VF / V 1 1.2 1.4
10us
1ms
tp / s
0.1s
10s
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-hs = f(tp).
August 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.2 3.0 10.3 max
PBYR745X series
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4
M
2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7
Fig.7. SOD113; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
August 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR745X series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be p.