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PBYR745X Dataheets PDF



Part Number PBYR745X
Manufacturers NXP
Logo NXP
Description Rectifier diodes schottky barrier
Datasheet PBYR745X DatasheetPBYR745X Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR745X series QUICK REFERENCE DATA SY.

  PBYR745X   PBYR745X


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Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR745X series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) PARAMETER PBYR7Repetitive peak reverse voltage Forward voltage Average forward current MAX. 35X 35 0.57 7.5 MAX. 40X 40 0.57 7.5 MAX. 45X 45 0.57 7.5 UNIT V V A PINNING - SOD113 PIN 1 2 DESCRIPTION cathode anode PIN CONFIGURATION case SYMBOL k 1 a 2 case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IF(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 7.5 10.6 15 100 110 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 128 ˚C Average forward current square wave; δ = 0.5; Ths ≤ 123 ˚C I2t IRRM IRSM Tstg Tj RMS output current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 123 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature -65 - 50 1 1 175 150 A2s A A ˚C ˚C August 1996 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. - PBYR745X series TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air. MIN. TYP. 55 MAX. 5.5 UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRRM VR = VRRM; Tj = 125 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C MIN. TYP. 0.50 0.62 0.78 50 13 350 MAX. 0.59 0.72 0.84 100 22 UNIT V V V µA mA pF August 1996 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR745X series 8 7 6 5 4 PF / W Vo = 0.419 Rs = 0.015 PBYR745F Ths(max) / C 106 111.5 IR / mA 100 PBYR745 D = 1.0 0.5 0.2 0.1 3 2 1 T I tp D= tp T t 117 122.5 128 133.5 139 144.5 10 150 C 125 C 1 100 C 0.1 75 C Tj = 50 C 0 25 VR/ V 50 0.01 10 150 12 0 0 2 4 6 IF(AV) / A 8 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. PF / W Vo = 0.419 Rs = 0.015 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 5 PBYR745 Ths(max) / C a = 1.57 1.9 122.5 Cd / pF 1000 PBYR745 4 2.8 3 4 2.2 128 133.5 100 2 139 1 144.5 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 10 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). IF / A Tj = 25 C 40 Tj = 125 C PBYR745 typ max Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 50 Zth j-hs (K/W) 10 1 30 20 0.1 10 P D tp t 0 0.01 0 0.2 0.4 0.6 0.8 VF / V 1 1.2 1.4 10us 1ms tp / s 0.1s 10s Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; Zth j-hs = f(tp). August 1996 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g 3.2 3.0 10.3 max PBYR745X series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7 Fig.7. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1996 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR745X series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be p.


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