HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER
VOLTAGE RANGE 1200 to 20...
Description
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER
VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere
FEATURES
* * * * Low cost Low leakage Low forward voltage drop High current capability
DO-41
MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.35 gram
1.0 (25.4) MIN. .034 (0.9) DIA. .028 (0.7)
.205 (5.2) .166 (4.2)
.107 (2.7) .080 (2.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
o
1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 50 oC Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO I FSM CJ T J , T STG R1200 1200 840 1200 R1500 1500 1050 1500 500 30 30 -65 to + 175 R1800 1800 1260 1800 R2000 2000 1400 2000 200 UNITS Volts Volts Volts mAmps Amps pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Vol...
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