PTB20008

e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 10 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 15.0 Output Power (Watts) 12.5 10.0 7.5 5.0 2.5 0.0 0.2 VCC = 24 V ICQ = 100 mA f = 960 MHz 200 08 LOT COD E 0.4 0.6 0.8 1.0 1.2 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 6.7 65 0.4 –40 to +150 2.7 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20008 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20...