PTB20030

e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 15 Watts, 420–470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 200 30 LOT COD E VCC = 24 V ICQ = 200 mA f = 470 MHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 48 50 4.0 6.0 63 0.30 –40 to +150 2.8 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20030 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions Ib = 0 A, IC = 40 mA, RBE = 22 Ω VBE = 0 V, IC = 40 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 0.4 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50...