PTB20038

e PTB 20038 25 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. It is specifically designed for high efficiency operation at average power levels around 10 watts with high PEP capacity. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 25 Watts, 860–900 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 35 Output Power (Watts) 30 25 20 15 10 5 0 0 1 2 3 4 5 200 38 LOT CO DE VCC = 25 V ICQ = 100 mA f = 900 MHz Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 6.7 65 0.37 –40 to +150 2.7 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20038 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC...