PTB20046

e PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 1 Watt, 1465–1513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride Passivated 200 46 LOT COD E Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Thermal Resistance (Tflange = 70°C) Tstg RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.7 10 0.057 150 17.5 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20046 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ — — 5 50 Max — — — 120 Units Volts Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz) Power Ou...