PTB20053

e PTB 20053 60 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 60 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride Passivated Gain vs. Frequency (as measured in a broadband circuit) 13 12 VCC = 25 V ICQ = 200 mA Pout = 60 W Gain (dB) 11 10 9 8 7 850 200 53 LOT CO DE 860 870 880 890 900 910 Frequency (MHz) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 8.0 145 0.83 –40 to +150 1.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20053 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 2...