PTB20081

e PTB 20081 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 150 Watts (P-Sync), 470–860 MHz Class AB Characteristics 55% Collector Efficiency at 100 Watts (CW) Guaranteed Performance at 28 Volts, 860 MHz - Output Power = 125 Watts (Peak Sync) - Output Power = 100 Watts (CW) - Minimum Gain = 8.5 dB Guaranteed Performance at 32 Volts, 860 MHz - Output Power = 150 Watts (Peak Sync) Typical Gain vs. Frequency (as measured in a broadband circuit) 10.0 9.5 Gain (dB) 9.0 8.5 8.0 7.5 7.0 470 200 81 LOT COD E VCC = 28 V ICQ = 2 x 100 mA Pout = 100 W 548 626 704 782 860 Frequency (MHz) Package 20212 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 12 233 1.33 –40 to +150 0.75 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20081 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Vo...