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PTB 20141 18 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor
Description
The 20141 is a class AB, NPN, commo...
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PTB 20141 18 Watts, 1.465–1.513 GHz Cellular Radio RF Power
Transistor
Description
The 20141 is a class AB,
NPN, common emitter RF power
transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
18 Watts, 1.465–1.513 GHz Class AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
Output Power (Watts)
25 20 15 10 5 0 0
VCC = 23 V ICQ = 50 mA f = 1.501 GHz
201 41
LOT COD E
1
2
3
4
5
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 2.0 51.5 0.29 –40 to +150 3.5
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20141
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 40 mA, RBE = 22 Ω VBE = 0 V, IC = 40 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A
Symbol
V(BR)CER V(BR)CES V(BR)EBO hFE
...