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PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20146 is a class A, NPN, common emi...
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PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power
Transistor
Description
The 20146 is a class A,
NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
0.4 Watt, 1.8–2.0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
VCC = 26 V Output Power (Watts)
0.8 0.6 0.4 0.2 0.0 0.00
ICQ = 140 mA f = 2.0 GHz
20 14 6
LO TC OD E
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) 1 9/28/98 TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 0.5 5.4 0.031 –40 to +150 32.3
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
PTB 20146
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC =...