PTB20171

e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 25 Watts, 935–960 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 Output Power (Watts) 30 20 201 71 LOT CO DE VCC = 24 V 10 ICQ = 150 mA f = 960 MHz 0 0 1 2 3 4 5 Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 5.0 145 0.833 –40 to +150 1.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20171 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 55 4 20 Typ 50 60 5 40 Max — — — — Units Volts Volt...