PTB20189

e PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 25 Volt, 900–960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power and Efficiency vs. Input Power 2.0 80 VCC = 25 V 1.5 Output Power (Watts) ICQ = 175 mA f = 960 MHz 60 1.0 40 Efficiency (%) 201 89 LO TC OD E 0.5 20 0.0 0.00 0.02 0.04 0.06 0.08 0 0.10 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 0.5 11 0.063 –40 to +150 16.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20189 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Condition...