PTB20204

e PTB 20204 1.0 Watt, 380–500 MHz RF Power Transistor Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 1.0 Watt, 380–500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.0 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 2.0 Output Power (Watts) 1.6 1.2 0.8 0.4 0.0 0.00 202 04 LO TC OD E VCE = 24 V ICQ = 340 mA f = 500 MHz 0.03 0.06 0.09 0.12 0.15 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 60 60 4.0 0.5 11 0.0625 -40 to +150 16 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20204 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA VCB = 24 V, IE = 0 A, f = 1 MHz Symbol V(BR)CEO V(B...