PTB20219

e PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 70 Watts, 925–960 MHz Class AB Characteristics Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IMD = -30 max. at 50 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 Output Power (Watts) 2021 9 LOT COD E f = 960 MHz VCC = 26 V ICQ = 0.200 A Input Power (Watts) Package 20216 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25° C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 20 159 0.95 –40 to +150 1.1 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20219 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IB = 0 A, IC = 100 mA...