PTB20230

e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 45 Watts, 1.8–2.0 GHz Class AB Characteristics 45% Collector Efficiency at 45 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 60 50 40 30 20 10 0 0 2 4 6 8 10 Output Power (Watts) 2023 0 LOT COD E VCC = 26 V ICQ = 250 mA f = 2.0 GHz Input Power (Watts) Package 20234 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 55 55 4.0 7.7 200 1.2 –40 to +150 0.85 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20230 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 100 mA IB = 0 A, IC = 100 mA, RBE = 22 Ω IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(...