Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D031
PTB23003X NPN microwave power transistor
Product specification Supersedes data of 1997 Feb 19 1997 Nov 13
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz.
3
PTB23003X
PINNING - SOT440A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION
olumns
1 c
b
e
MAM131
DESCRIPTION
Top view
2
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
Marking code: 2303X.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. MODE OF OPERATION CW f (GHz) 2 VCC (V) 24 PL (W) ≥3 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Gpo (dB) ≥8.75 ηC (%) ≥45 Zi (Ω) 2.5 + j14 ZL ( Ω) 8 + j6
1997 Nov 13
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C; f > 1 MHz CONDITIONS open emitter open base RBE = 0 − − − − − −65 − − MIN.
PTB23003X
MAX. 40 15 40 0.5 7.6 +200 200 235 V V V A
UNIT
W °C °C °C
handbook, halfpage
10
MLC092
Ptot (W)
5
0 50 0 50 100 150 200 Tmb (oC)
f > 1 MHz.
Fig.2
Power derating curve.
1997 Nov 13
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO IEBO Ccb Cce PARAMETER collector-base breakdown voltage collector cut-off current emitter cut-off current collector-base capacitance collector-emitter capacitance CONDITIONS IC = 2 mA; IE = 0 VCE = 24 V; IE = 0 VEB = 1.5 V; IC = 0 IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz MIN. 40 40 − − − − PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 75 °C Tj = 75 °C; note 1
PTB23003X
MAX. 12 0.7
UNIT K/W K/W
TYP. − − − − 3 0.6
MAX. − − 20 0.4 − −
UNIT V V µA µA pF pF
collector-emitter breakdown voltage IC = 10 mA; RBE = 0
1997 Nov 13
4
Philips Semiconductors
Product specification
NPN microwave power transistor
APPLICATION INFORMATION Microwave performance in a common-base class B selective amplifier circuit; see note 1. MODE OF OPERATION Class B (CW) Note f (GHz) 2 VCC (V) 24 PL (W) >3; typ. 4 Gpo (dB)
PTB23003X
ηC (%) >45; typ. 50
>8.75; typ. 10
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
handbook, full pagewidth
3.6 input 3.6
,,,,,,, ,,,,,,, ,,,,,,,, , , , , ,, , , ,,,,,,, ,,,,,,,, ,, , , , ,,,,,,, ,,,,,,,, ,,,,,, , , ,,,,,,,
3.2 2.5 3.5 3.5 15 3.2 2 0.4 0.5 7.8 2 8 3 3.2 100 pF ATC 1.5 5 12.7 12 7.3 3 3.2 6 4 5 30 30
MSA103
output
Dimensions in mm. Thickness: 0.8 mm. Permittivity: εr = 2.55. Substrate: circuits on a double copper clad printed-circuit board Teflon fibreglass dielectric.
Fig.3 Prematching test circuit board.
1997 Nov 13
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads
PTB23003X
SOT440A
D
A F
3
U1 q b1 w2 M C C
B
c
1
H
U2
E
A
p
w1 M A B
2
b w2 M C Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.25 3.27 b 2.16 1.90 b1 1.15 0.88 c 0.16 0.07 D 5.85 5.58 E 5.31 5.00 F 1.66 1.39 H 15.75 14.73 p 3.18 2.92 Q 3.48 2.92 q 14.22 U1 20.45 20.19 U2 5.21 4.95 w1 0.51 w2 1.02
OUTLINE VERSION SOT440A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTI.