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PTB23003X Dataheets PDF



Part Number PTB23003X
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet PTB23003X DatasheetPTB23003X Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal re.

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz. 3 PTB23003X PINNING - SOT440A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION olumns 1 c b e MAM131 DESCRIPTION Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. Marking code: 2303X. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. MODE OF OPERATION CW f (GHz) 2 VCC (V) 24 PL (W) ≥3 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Gpo (dB) ≥8.75 ηC (%) ≥45 Zi (Ω) 2.5 + j14 ZL ( Ω) 8 + j6 1997 Nov 13 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C; f > 1 MHz CONDITIONS open emitter open base RBE = 0 − − − − − −65 − − MIN. PTB23003X MAX. 40 15 40 0.5 7.6 +200 200 235 V V V A UNIT W °C °C °C handbook, halfpage 10 MLC092 Ptot (W) 5 0 50 0 50 100 150 200 Tmb (oC) f > 1 MHz. Fig.2 Power derating curve. 1997 Nov 13 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO IEBO Ccb Cce PARAMETER collector-base breakdown voltage collector cut-off current emitter cut-off current collector-base capacitance collector-emitter capacitance CONDITIONS IC = 2 mA; IE = 0 VCE = 24 V; IE = 0 VEB = 1.5 V; IC = 0 IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz MIN. 40 40 − − − − PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 75 °C Tj = 75 °C; note 1 PTB23003X MAX. 12 0.7 UNIT K/W K/W TYP. − − − − 3 0.6 MAX. − − 20 0.4 − − UNIT V V µA µA pF pF collector-emitter breakdown voltage IC = 10 mA; RBE = 0 1997 Nov 13 4 Philips Semiconductors Product specification NPN microwave power transistor APPLICATION INFORMATION Microwave performance in a common-base class B selective amplifier circuit; see note 1. MODE OF OPERATION Class B (CW) Note f (GHz) 2 VCC (V) 24 PL (W) >3; typ. 4 Gpo (dB) PTB23003X ηC (%) >45; typ. 50 >8.75; typ. 10 1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners. handbook, full pagewidth 3.6 input 3.6 ,,,,,,, ,,,,,,, ,,,,,,,, , , , , ,, , , ,,,,,,, ,,,,,,,, ,, , , , ,,,,,,, ,,,,,,,, ,,,,,, , , ,,,,,,, 3.2 2.5 3.5 3.5 15 3.2 2 0.4 0.5 7.8 2 8 3 3.2 100 pF ATC 1.5 5 12.7 12 7.3 3 3.2 6 4 5 30 30 MSA103 output Dimensions in mm. Thickness: 0.8 mm. Permittivity: εr = 2.55. Substrate: circuits on a double copper clad printed-circuit board Teflon fibreglass dielectric. Fig.3 Prematching test circuit board. 1997 Nov 13 5 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads PTB23003X SOT440A D A F 3 U1 q b1 w2 M C C B c 1 H U2 E A p w1 M A B 2 b w2 M C Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.25 3.27 b 2.16 1.90 b1 1.15 0.88 c 0.16 0.07 D 5.85 5.58 E 5.31 5.00 F 1.66 1.39 H 15.75 14.73 p 3.18 2.92 Q 3.48 2.92 q 14.22 U1 20.45 20.19 U2 5.21 4.95 w1 0.51 w2 1.02 OUTLINE VERSION SOT440A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTI.


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