Document
DISCRETE SEMICONDUCTORS
DATA SHEET
PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistors
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz. DESCRIPTION
olumns
PTB32001X; PTB32003X; PTB32005X
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1 c
b
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
Top view
3 2
MAM131
e
MARKING TYPE NUMBER PTB32001X PTB32003X PTB32005X MARKING CODE 3201X 3203X 3205X Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. TYPE NUMBER PTB32001X PTB32003X PTB32005X MODE OF OPERATION CW CW CW 3 3 3 f (GHz) 24 24 24 VCC (V) PL (W) ≥1.3 ≥2.5 ≥4.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. ≥8 ≥8 ≥8 Gpo (dB) ηC (%) ≥35 ≥35 ≥35 Zi (Ω) 15 + j31 5.5 + j29 2.8 + j20 ZL (Ω) 5.5 + j10 5 − j2.2 4 − j7
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) PTB32001X PTB32003X PTB32005X Ptot total power dissipation PTB32001X PTB32003X PTB32005X Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. storage temperature range operating junction temperature soldering temperature t ≤ 10 s; note 1
PTB32001X; PTB32003X; PTB32005X
CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − − Tmb ≤ 75 °C; f > 1 MHz − − −
MIN.
MAX. 40 15 40 3.0 0.25 0.5 0.75 4.2 7.6 8.7 +200 200 235 V V V V A A A
UNIT
W W W °C °C °C
−65 − −
handbook, halfpage
6
MLC091
handbook, halfpage
10
MLC092
Ptot (W)
Ptot (W)
4
5
2
0
−50
0 0 50 100 150 200 Tmb (oC) 50 0 50 100 150 200 Tmb (oC)
f > 1 MHz.
f > 1 MHz.
Fig.2
Power derating curve; PTB32001X.
Fig.3
Po.