PTB32003X

DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistors FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Multicell geometry gives good balance of dissipated power and low thermal resistance Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz. DESCRIPTION olumns PTB32001X; PTB32003X; PTB32005X PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. Top view 3 2 MAM131 e MARKING TYPE NUMBER PTB32001X PTB32003X PTB32005X MARKING CODE 3201X 3203X 3205X Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. TYPE NUMBER PTB32001X PTB32003X PTB32005X MODE OF OPERATION CW CW CW 3 3 3 f (GHz) 24 24 24 VCC (V) PL (W) ≥1.3 ≥2.5 ≥4.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe pro...