LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Description
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Outpu...
