PTF10007

PTF 10007 35 Watts, 1.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Available in Package 20235 as PTF 10052 Typical Output Power & Efficiency vs. Input Power 50 Output Pow er (W) 40 80 Ef f iciency (%) 60 40 20 0 0 1 2 3 100 1 A -1 2000 3456 7 9723 Efficiency Package 20222 Output Power 30 20 10 0 VDD = 28 V IDQ = 300 m A f = 960 MHz Package 20235 A-1 234 569 999 100 52 Input Power (Watts) Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Value 60 ±20 200 120 0.7 –40 to +150 1.4 Unit Vdc Vdc °C Watts W/°C °C °C/W e 1 PTF 10007 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Sym...