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PTF10009 Dataheets PDF



Part Number PTF10009
Manufacturers Ericsson
Logo Ericsson
Description 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Datasheet PTF10009 DatasheetPTF10009 Datasheet (PDF)

PTF 10009 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivat.

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PTF 10009 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability • • • • Typical Output Power and Efficiency vs. Input Power 100 90 Output Power (W) 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 Efficiency (%) 80 72 64 56 48 40 32 24 16 8 0 Output Power Efficiency 1234 1000 5697 44 9 VDS = 28 V IDQ = 600 mA Total f = 960 MHz Input Power (Watts) Package 20230 Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) (1)per side Symbol VDSS VGS TJ PD TSTG RqJC Value 65 ±20 200 270 1.54 -65 to 150 0.65 Unit Vdc Vdc °C Watts W/°C °C °C/W All published data at TCASE = 25°C unless otherwise indicated. e 1 PTF 10009 Electrical Characteristics Characteristic (per side) Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested—characteristics, conditions and limits shown per side) Min 65 — 3.0 — Typ — — — 2.8 Max — 1.0 5.0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Dynamic Characteristics Characteristic (per side) Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Symbol Ciss Coss Crss Min — — — Typ 90 36 1.9 Max — — — Units pF pF pF RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz— all phase angles at frequency of test) Symbol Gps h Y Min 12.0 47 — Typ 13.0 50 — Max — — 5:1 Units dB % — Impedance Data (data shown for fixed-tuned broadband circuit) (VDD = 28 V, Pout = 85 W, IDQ = 600 mA) Z Source D Z Load G G S D Frequency MHz 860 900 960 1000 R Z Source W jX -0.78 -0.05 0.69 1.35 R 1.76 1.80 1.58 1.39 Z Load W jX -1.50 -0.78 0.36 1.41 2 5.00 4.80 4.24 3.95 Z0 = 50 W e Typical Performance Gain vs. Power Output 20.0 17.5 15.0 PTF 10009 Intermodulation Distortion vs. Output Power -10 VDS = 28V -20 IDQ = 600 mA Total f1 = 960.0 MHz f2 = 960.1 MHz 3rd Order Gain (dB) IMD (dBc) -30 -40 12.5 10.0 7.5 5.0 0 20 40 60 80 100 5th VDS = 28 V IDQ = 600mA Total f = 960 MHz 7th -50 -60 0 20 40 60 80 100 Output Power (Watts) Output Power (Watts-PEP) Output Power vs. Drain-Source Voltage 100 Gain vs. Frequency (as measured in a broadband circuit) 14 Output Power (Watts) 95 90 13 Gain (dB) 85 80 75 70 65 22 24 26 28 30 32 34 12 VDS = 28 V 11 IDQ = 600 mA Total f = 960 MHz IDQ = 600 mA Total Pout = 85 W 910 920 930 940 950 960 10 900 Drain-Source Voltage (Volts) Frequency (MHz) Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.43 Voltage normalized to 1.0 V Series show current (A) 0.99 0.98 0.97 0.96 0.95 -20 30 80 Temp. (°C) 1.25 2.08 2.9 3.71 4.53 130 3 PTF 10009 Typical Scattering Parameters (VDS = 28 V, ID = 1.0 A per side) e S11 S21 Ang -153 -160 -163 -164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -177 -178 -179 180 179 179 179 179 179 f (MHz) 40 60 80 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S12 Ang 93 85 80 76 65 58 51 45 41 36 33 30 27 26 22 21 19 16 14 12 14 8 3 6 1 4 -5 -5 -5 -3 5 -8 S22 Ang 3 1 -6 -13 -18 -23 -31 -31 -28 -33 -36 -52 -46 -53 -27 -18 -13 14 -1 30 53 59 56 69 57 65 56 61 52 59 58 62 Mag 0.883 0.878 0.876 0.884 0.904 0.915 0.934 0.947 0.962 0.975 0.974 0.977 0.979 0.985 0.981 0.980 0.975 0.973 0.972 0.969 0.966 0.969 0.969 0.970 0.970 0.970 0.971 0.971 0.973 0.973 0.972 0.965 Mag 33.0 21.8 16.1 12.8 8.21 5.67 4.36 3.41 2.78 2.30 1.90 1.65 1.44 1.28 1.14 1.01 0.924 0.809 0.749 0.656 0.609 0.564 0.526 0.450 0.405 0.383 0.351 0.330 0.308 0.255 0.219 0.210 Mag 0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.010 0.008 0.008 0.006 0.006 0.005 0.004 0.003 0.004 0.003 0.001 0.003 0.003 0.002 0.003 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006 Mag 0.527 0.533 0.553 0.574 0.638 0.694 0.769 0.792 0.837 0.873 0.874 0.912 0.916 0.925 0.933 0.933 0.936 0.946 0.939 0.946 0.948 0.945 0.949 0.955 0.953 0.952 0.959 0.957 0.963 0.965 0.965 0.957 .


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