e
PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common s...
e
PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect
Transistor
Description
The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180 60 Efficiency
Output Power (Watts)
Efficiency (%)
140
45
100
30
A-12 3456 9917
1010 0
VDD = 28.0 V
60 Output Power 20 0 1 2 3 4 5 6 7 8 0
IDQ = 1.8 A Total f = 880 MHz
15
Input Power (Watts)
Package 20250
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C)
(1) per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 ±20 200 500 2.85 –40 to +150 0.35
Unit
Vdc Vdc °C Watts W/°C °C °C/W
1
PTF 10100
Electrical Characteristics (per side) (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 ...
