PTF10112

PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 80 Output Power (Watts) 60 A-12 40 1011 3456 2 98 37 VCC = 28 V 20 IDQ = 580 mA f = 2000 MHz 0 1 2 3 4 5 6 0 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 580 mA, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB hD Y Min 11 60 — — Typ 12 — 41 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10112 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Thr...