PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10119 is an internally matched, com...
PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect
Transistor
Description
The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability.
INTERNALLY MATCHED Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% lot traceability
Typical Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0 0.2 0.4 0.6 0.8 1 1.2
A-12
1011 9
3456 0053
VDD = 28 V IDQ = 160 mA f = 2170 MHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C)
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 ±20 200 55 0.31 –40 to +150 3.2
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10119
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 — 3.0 —
Typ
— — — 0.8
Max
— 1.0 5.0 —
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VD...