PTF10122

PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 60 50 40 30 30 20 10 0 0 1 2 3 4 5 6 20 10 0 Output Power (Watts) 50 40 Efficiency (%) A-12 1012 3456 2 994 6 VDD = 28 V IDQ = 600 mA f = 2.17 GHz Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 600 mA, f = 2.11 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol G ps P-1dB hD Y Min 10.0 50 30 — Typ 11.0 — 35 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10122 Electrical Characteristics (100% Tested) Characteristic Drai...