PTF10135

PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard. • • • • • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability Typical Output Power vs. Input Power 8 7 Output Power (Watts) 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 A-1 234 569 953 101 35 VDD = 26 V IDQ = 70 mA f = 2000 MHz Input Power (Watts) Package 20249 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±20 200 39 0.22 –40 to +150 4.5 Unit Vdc Vdc °C Watts W/°C °C °C/W e 1 PTF 10135 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 5 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.0 — Typ — — — 0.8 Max — 1.0 5.0 — Units...