PTF10162

PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Performance at 960 MHz, 26 Volts - Output Power = 18 Watts - Power Gain = 15 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 24 80 70 Efficiency 60 50 20 Output Power 16 12 8 4 0 0.0 0.3 0.5 0.8 1.0 Output Power (Watts) Efficiency (%) A -1 2 1016 3456 2 985 5 VDD = 26 V IDQ = 130 mA f = 960 MHz 40 30 20 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB h Y Min 14 18 50 — Typ 15 20 55 — Max — — — 5:1 Units dB Watts % — e 1 PTF 10162 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage D...