PTF10195

PTF 10195 125 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability Typical Power Output and Efficiency vs. Input Power 160 64 56 Power Output (Watts) 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Power Output Efficiency 40 Efficiency (%) 48 VDD = 28 V IDQ = 1.3 A f = 894 MHz 32 24 16 8 0 1234 1019 5600 5 -A Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1300 mA, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 13 125 45 10:1 Typ 14 140 53 — Max — — — — Units dB Watts % — e 1 PTF 10195 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3...