PTF210451

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features Internal matching for wideband performance Typical two–carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Two–Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 Efficiency 30 25 20 ACPR -45 -50 -55 30 32 34 36 38 40 42 IM3 15 10 5 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) -35 -40 Average Output Power (dBm) PTF210451E Package 30265 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, P OUT = 11.5 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol...