PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally ...
PTF211301
LDMOS RF Power Field Effect
Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
Broadband internal matching Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
Two–Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 -35 35 30 Efficiency IM3
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
-40 -45 -50 -55 -60 36 38
25 20 15 10 5
ACPR 40 42 44 46
Average Output Power (dBm)
PTF211301A Package 20260
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
I...