Document
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • Broadband internal matching Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
Two–Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 -35 35 30 Efficiency IM3
•
•
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
-40 -45 -50 -55 -60 36 38
25 20 15 10 5
• •
ACPR 40 42 44 46
Average Output Power (dBm)
PTF211301A Package 20260
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps
Min
— — —
Typ
–37 13.5 25
Max
— — —
Units
dBc dB %
ηD
Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
12 34 —
Typ
13.5 37 –30
Max
— — –28
Units
dB % dBc
ηD
IMD
ESD: Electrostatic discharge sensitive device — observe handling precautions! Data Sheet 1 2004-01-02
PTF211301
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1.5 A VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 — — 2.5 —
Typ
— — 0.07 3.2 —
Max
— 1.0 — 4.0 1.0
Units
V µA Ω V µA
Maximum Ratings
Parameter
Drain–Source Voltage Gate–Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 130 W CW) TSTG RθJC
Symbol
VDSS VGS TJ PD
Value
65 –0.5 to +12 200 350 2.0 –40 to +150 0.50
Unit
V V °C W W/°C °C °C/W
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 1.50 A, POUT = 44 dBm
Intermodulation Distortion Products & Efficiency vs. Output Power
VDD = 28V, IDQ = 1.50 A, f = 2140 MHz, tone spacing = 1 MHz
-30 40 Efficiency 35 30 IM3 25 20 15 IM5 IM7 38 40 42 44 46 48 50 52 10 5 0 -35 -40
45
-5
Gain (dB), Efficiency (%)
35 30 25 20 15 Gain Efficiency
-15 -20 -25 -30 -35 -40 2210
IMD (dBc)
-45 -50 -55 -60 -65 -70
10 2060
2110
2160
Frequency (MHz)
Output Power, PEP (dBm)
Data Sheet
2
2004-01-02
Drain Efficiency (%)
Input Return Loss
Input Return Loss (dB)
40
-10
PTF211301
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28V, f = 2140 MHz, tone spacing = 1 MHz
-30 -35 1.65 A -40 -45 -50 -55 -60 -65 38 40 42 44 46 48 50 52 1.20 A 1.80 A
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 1.50 A, f = 2170 MHz
15 14 Gain 55
3rd Order IMD (dBc)
Gain (dB)
13 12 11
35 25 15 5 37 42 47 52
Efficiency
1.35 A
1.50 A
10
Peak Output Power (dBm)
Output Power (dBm)
Single–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8.5 dB, 3.84 MHz bandwidth
-40 Efficiency -42 -44 -46 -48 ACPR Low -50 34 36 38 40 42 44 ACPR Up 0 25 20 15 10 5
IM3, Gain & Drain Efficiency vs Supply Voltage
IDQ = 1.50 A, f = 2140 MHz, POUT = 47.8 dBm PEP, tone spacing = 1 MHz
0 -5 45 40
Drain Efficiency (%)
IM3 (dBc)
-15 -20 -25 -30 -35 -40 -45 23 24 25 26 27 28 29 30 31 32 33 IM3 Up Gain
30 25 20 15 10 5 0
Average Output Power (dBm)
Supply Voltage (V)
Data Sheet
3
2004-01-02
Drain Efficiency (%)
Adjacent Channel Power Ratio (dBc)
-10
Efficiency
35
Drain Efficiency (%)
45
PTF211301
Typical Performance (cont.)
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 1.50 A, , POUT = 50.8 dBm PEP, f = 2140 MHz
-20
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage. Series show current.
1.03 2.25 A 4.50 A 6.75 A 9.00 A 11.25 A 13.50 A
Intermodulation Distortion (dBc)
-30 3rd Order -40 5th Order -50 7th Order -60 0 5 10 15 20 25 30 35
Normalized Bias Voltage
1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20 20 60 100
Tone Spacing (MHz).