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PTF211301A Dataheets PDF



Part Number PTF211301A
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
Datasheet PTF211301A DatasheetPTF211301A Datasheet (PDF)

PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25%.

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PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power Two–Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 -35 35 30 Efficiency IM3 • • Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -40 -45 -50 -55 -60 36 38 25 20 15 10 5 • • ACPR 40 42 44 46 Average Output Power (dBm) PTF211301A Package 20260 RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps Min — — — Typ –37 13.5 25 Max — — — Units dBc dB % ηD Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min 12 34 — Typ 13.5 37 –30 Max — — –28 Units dB % dBc ηD IMD ESD: Electrostatic discharge sensitive device — observe handling precautions! Data Sheet 1 2004-01-02 PTF211301 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1.5 A VGS = 10 V, V DS = 0 V Symbol V(BR)DSS IDSS RDS(on) VGS IGSS Min 65 — — 2.5 — Typ — — 0.07 3.2 — Max — 1.0 — 4.0 1.0 Units V µA Ω V µA Maximum Ratings Parameter Drain–Source Voltage Gate–Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 130 W CW) TSTG RθJC Symbol VDSS VGS TJ PD Value 65 –0.5 to +12 200 350 2.0 –40 to +150 0.50 Unit V V °C W W/°C °C °C/W Typical Performance (data taken in a production test fixture) Broadband Performance VDD = 28 V, IDQ = 1.50 A, POUT = 44 dBm Intermodulation Distortion Products & Efficiency vs. Output Power VDD = 28V, IDQ = 1.50 A, f = 2140 MHz, tone spacing = 1 MHz -30 40 Efficiency 35 30 IM3 25 20 15 IM5 IM7 38 40 42 44 46 48 50 52 10 5 0 -35 -40 45 -5 Gain (dB), Efficiency (%) 35 30 25 20 15 Gain Efficiency -15 -20 -25 -30 -35 -40 2210 IMD (dBc) -45 -50 -55 -60 -65 -70 10 2060 2110 2160 Frequency (MHz) Output Power, PEP (dBm) Data Sheet 2 2004-01-02 Drain Efficiency (%) Input Return Loss Input Return Loss (dB) 40 -10 PTF211301 Typical Performance (cont.) Intermodulation Distortion vs. Output Power VDD = 28V, f = 2140 MHz, tone spacing = 1 MHz -30 -35 1.65 A -40 -45 -50 -55 -60 -65 38 40 42 44 46 48 50 52 1.20 A 1.80 A Power Sweep, CW Conditions VDD = 28 V, IDQ = 1.50 A, f = 2170 MHz 15 14 Gain 55 3rd Order IMD (dBc) Gain (dB) 13 12 11 35 25 15 5 37 42 47 52 Efficiency 1.35 A 1.50 A 10 Peak Output Power (dBm) Output Power (dBm) Single–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8.5 dB, 3.84 MHz bandwidth -40 Efficiency -42 -44 -46 -48 ACPR Low -50 34 36 38 40 42 44 ACPR Up 0 25 20 15 10 5 IM3, Gain & Drain Efficiency vs Supply Voltage IDQ = 1.50 A, f = 2140 MHz, POUT = 47.8 dBm PEP, tone spacing = 1 MHz 0 -5 45 40 Drain Efficiency (%) IM3 (dBc) -15 -20 -25 -30 -35 -40 -45 23 24 25 26 27 28 29 30 31 32 33 IM3 Up Gain 30 25 20 15 10 5 0 Average Output Power (dBm) Supply Voltage (V) Data Sheet 3 2004-01-02 Drain Efficiency (%) Adjacent Channel Power Ratio (dBc) -10 Efficiency 35 Drain Efficiency (%) 45 PTF211301 Typical Performance (cont.) Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, IDQ = 1.50 A, , POUT = 50.8 dBm PEP, f = 2140 MHz -20 Gate-Source Voltage vs. Case Temperature Voltage normalized to typical gate voltage. Series show current. 1.03 2.25 A 4.50 A 6.75 A 9.00 A 11.25 A 13.50 A Intermodulation Distortion (dBc) -30 3rd Order -40 5th Order -50 7th Order -60 0 5 10 15 20 25 30 35 Normalized Bias Voltage 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20 20 60 100 Tone Spacing (MHz).


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