PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally ...
PTF211802
LDMOS RF Power Field Effect
Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
Two–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35 -30
Efficiency (%), Gain (dB)
30 25 20 15 10 -35
IMD (dBc), ACPR (dB)
Gain
Drain Efficiency IM3
-40 -45 -50 -55
PTF211802A Package 20275
ACPR
5 35 37 39 41 43 45 47 -60
Output Power (dBm), Average
PTF211802E Package 30275
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.0...