DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMB11 PNP resistor-equipped double transistor
Product speci...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMB11
PNP resistor-equipped double
transistor
Product specification 2000 Aug 08
Philips Semiconductors
Product specification
PNP resistor-equipped double
transistor
FEATURES
Transistors with built-in bias resistors R1 and R2 (typ. 10 kΩ each) No mutual interference between the
transistors Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION
PNP resistor-equipped double
transistor in an SC-88 (SOT363) plastic package. MARKING TYPE NUMBER PUMB11 PINNING PIN 1 and 4 2 and 5 6 and 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING CODE Bt1
2, 5 1, 4
MBK120
PUMB11
handbook, halfpage
6 5 4 R1 TR1 R2
5
4
6
R2 TR2 R1
1 Top view
2
3
MAM426
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
6, 3
Fig.2 Equivalent inverter symbol.
2000 Aug 08
2
Philips Semiconductors
Product specification
PNP resistor-equipped double
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per
transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Refer to SC-88 standard mounting conditions. total power dissipation Tamb ≤ 25 °C; note 1 − ...